AT28HC256E-12DM/883
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A quick read access time - 70 nanoseconds Page automatically write internal address and data latch to 64 bytes in the internal control timer Fast write cycle time page write cycle time: 3 milliseconds or 10 milliseconds maximum 1 to 64 bytes page write operations Low power working current is 80 ma ma 3 standby current The hardware and software data protection Polling data written test end High reliability of CMOS technology endurance: 104 or 105 cycle data: 10 years Single 5 v supply plus or minus 10% TTL and CMOS compatible with the input and output JEDEC byte wide pin approval The entire military, commercial and industrial temperature range |
The AT28HC256 is a high-performance electrically erasable programmable read-only memory. Its 256 k memory consists of 8 bits, 32768 words. With Atmel advanced non-volatile CMOS technology, manufacturing and supply of access time of 70 ns AT28HC256 only 440 milliwatts of power consumption. When AT28HC256 selected, standby current is less than 5mA |