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IRF740PBF

Detail:

parameter

The numerical

Product range:

MOSFET

Transistors polarity:

N-Channel

Drain/source breakdown voltage:

400 V

Brake/breakdown voltage source:

+/- 20 V

Continuous drain current:

10 A

On resistance:

550 mOhms

Configuration:

Single

Maximum working temperature:

+ 150 C

Install the style:

Through Hole

Encapsulation/enclosure:

TO-220-3

Packaging:

Tube

Trademark:

Vishay / Siliconix

Down time:

24 ns

Minimum working temperature:

- 55 C

Power dissipation:

125 W

Rise time:

27 ns

Number of factory packaging:

50

Typical closing delay time:

50 ns

Part number alias:

SIHF740-E3